| Trion始于***九八九年的等離子刻蝕與沉積系統(tǒng)制造商，Trion為化合物半導(dǎo)體、MEMS(微機(jī)電系統(tǒng))、光電器件以及其他半導(dǎo)體市場(chǎng)提供多種設(shè)備。我們的產(chǎn)品在業(yè)內(nèi)以系統(tǒng)占地面積*小、成本低而著稱(chēng)，且設(shè)備及工藝的可靠性和穩(wěn)定性久經(jīng)考驗(yàn)。從整套的批量生產(chǎn)用設(shè)備，到簡(jiǎn)單的實(shí)驗(yàn)室研發(fā)用系統(tǒng)，盡在Trion。 批量生產(chǎn)用:
TITAN離子刻蝕與沉積系統(tǒng):
Titan是***套用于半導(dǎo)體生產(chǎn)的十分緊湊、全自動(dòng)化、帶預(yù)真空室的等離子系統(tǒng)。
Titan具有反應(yīng)離子刻蝕(RIE)配置、高密度電感耦合等離子沉積(HDICP)或等離子增強(qiáng)型化學(xué)汽相沉積(PECVD)配置?？蓪?duì)單個(gè)基片或帶承片盤(pán)的基片(3”-300mm)進(jìn)行處理。它還具有多尺寸批量處理功能。價(jià)格適宜且占地面積小。
刻蝕應(yīng)用范圍：
砷化鎵、砷化鋁鎵、氮化鎵、磷化鎵、磷化銦、鋁、硅化物、鉻以及其他要求腐蝕性和非腐蝕性化學(xué)刻蝕的材料。
沉積應(yīng)用范圍：
二氧化硅、氮化硅、氮氧化物和其他各種材料。
The United States Trion Technology Reactive ion etching (RIE/ICP) system ａnd deposition (PECVD) system Founded in 1989 as a manufacturer of plasma etching ａnd deposition systems, Trion supplies a wide range of devices to the compound semiconductor, MEMS(micro-electromechanical systems), optoelectronic devices, ａnd other semiconductor markets.Our products are well known in the industry for their minimal system footprint ａnd low cost, as well as the proven reliability ａnd stability of equipment ａnd processes.Trion has everything from a complete set of mass production equipment to a simple laboratory development system. Mass production: TITAN ion etching ａnd deposition system: Titan is a very compact, fully automated plasma system with a pre-vacuum chamber for semiconductor production. Titan has reactive ion etching (RIE) configurations, high-density inductively coupled plasma deposition (HDICP), or plasma-enhanced chemical vapor deposition (PECVD) configurations.A single substrate or substrate (3 "-300mm) with a backing plate can be processed.It also has multi-dimensional batch processing capabilities.Affordable ａnd small footprint. Etching application: Gallium arsenide, gallium arsenide, gallium nitride, gallium phosphate, indium phosphate, aluminum, silicides, chromium ａnd other materials requiring corrosive ａnd non-corrosive chemical etching. Application range of sedimentation: Silicon dioxide, silicon nitride, nitrogen oxides ａnd various other materials. | 
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